Why is silicon carbide (SiC) considered the most important material in third-generation semiconductors?

In the epitaxial process of MOCVD reaction equipment, the substrate wafer is supported by a rotating graphite disk base or carrier. The material properties of the graphite disk base play a critical role, which in turn affects the defect rate.

Hongjun New Materials uses high-purity isostatic graphite from Germany's SGL to carefully select the appropriate graphite grade for graphite disk bases and carriers. High-precision machining ensures uniform morphology and minimal flatness deviation within the carrier pits, guaranteeing product quality. Customized processing is available based on different customer requirements and specifications.