Wafer Bonding Machine Technical Solution

I. Equipment Composition Overview

The equipment consists of a pressure application system, pressure control system, heating system, vacuum system, gas circuit system, and electrical control system.

II. Equipment Technical Requirements

1. Equipment ultimate vacuum ≤1Pa;

2. Bonding platform size ≥200mm×200mm (L×W); platform parallelism: 0.05mm;

3. Bondable wafer thickness, 0~140mm;

Bondable chip size ≥150mm×150mm (L×W)

4. Pressure range: 0~3.5KN; bonding pressure can be arbitrarily programmed and controlled within the range;

? Pressure display accuracy: ±0.1KN

5. One set of vacuum system

Vacuum chamber, vacuum mechanical oil pump, manual angle valve, vacuum gauge, micro-positive pressure relief valve, air inlet, air inlet valve, and air inlet float flow meter.

6. Temperature control range room temperature~300℃; maximum temperature difference between upper and lower plates: 3℃;

Temperature can be flexibly set and programmed, temperature control accuracy: ±1% (below 100℃ ±1℃);

Uniform heating rate: 4℃/min (below 100℃); 3℃/min (100℃~200℃); 2℃/min (above 200℃); rapid heating rate: 10℃/min; number of temperature programming segments supported: 10 segments;

The upper and lower pressure plates are made of high-temperature alloy, with simultaneous heating and temperature control for both plates, capable of applying pressure without deformation at 600 degrees high temperature, ensuring the flatness of the pressure-applied substrate.

7. One set of electrical control system.

8. Power requirement: 220V, 3.5KW