SIC Silicon Carbide Device Parameter Tester
Functions and Main Parameters:
Suitable for time parameter testing of silicon carbide diodes, IGBT modules, MOSFETs, and other devices.

Brand: Huake Zhiyuan
Name: SIC Dynamic Parameter Tester
Model: HUSTEC-3000
Application: SIC devices, MOSFETs, IGBT testing

Product Details
Functions and Main Parameters:
Suitable for time parameter testing of silicon carbide diodes, IGBT modules, MOSFETs, and other devices.
Main Technical Parameters:
IGBT Switching Characteristics Test
Switching Time Test Conditions
Ic: 50A～1000A Vce: 200V～2000V
Vgs: -10V～＋20V Rg: 1R～100R adjustable (4 ranges and external connection optional)
Load: Inductive load and resistive load switchable
Inductance Range: 100uH, 200uH, 500uH, 1000uH
Resistance Range: 0.5R, 1R, 2R, 4R
IGBT Switching Characteristics Test Parameters
Turn-on delay td(on): 20nS -10uS
Rise time tr: 20nS -10uS
Turn-on energy Eon: 0.1-1000mJ
Turn-off delay time td(off): 20 nS -10uS
Fall time tf: 20nS -10uS
Turn-off energy Eoff: 0.1-1000mJ
Diode Reverse Recovery Characteristics Test
FRD Test Conditions: Forward current IF: 50A～1000A; Reverse voltage Vr: 200V~2000V; -di/dt: 100A/us～10000A/us; Load: Inductive load optional
Inductance Range: 100uH, 200uH, 500uH, 1000uH
FRD Test Parameters
Reverse recovery time trr: 20nS -2uS
Reverse recovery charge Qc: 10nC~10uC;
Reverse recovery current Irm: 50A~1000A
Reverse recovery loss Erec: 0.1mJ～1000mJ
Product Advantages
The only domestic equipment capable of performing time parameter tests on diodes, IGBT modules, MOSFETs, and other devices.